SI7655DN-T1-GE3
| Part No | SI7655DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 40A PPAK 1212 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
15442
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.738 | |
| 10 | 1.7032 | |
| 100 | 1.6511 | |
| 1000 | 1.599 | |
| 10000 | 1.5294 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 3.3 mm |
| Height | 780 µm |
| Length | 3.3 mm |
| Packaging | Tape & Reel (TR) |
| REACH SVHC | No SVHC |
| Rds On Max | 3.6 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 6.6 nF |
| Power Dissipation | 4.8 W |
| Threshold Voltage | -500 mV |
| Number of Channels | 2 |
| Number of Elements | 1 |
| Turn-On Delay Time | 45 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110 ns |
| Element Configuration | Dual |
| Max Power Dissipation | 57 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -50 °C |
| Drain to Source Resistance | 3.6 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | -40 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | -20 V |
