SISS27DN-T1-GE3
| Part No | SISS27DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 50A PPAK 1212-8S |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
16923
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7533 | |
| 10 | 0.7382 | |
| 100 | 0.7156 | |
| 1000 | 0.693 | |
| 10000 | 0.6629 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 830 µm |
| Fall Time | 20 ns |
| Packaging | Digi-Reel® |
| Rise Time | 45 ns |
| Rds On Max | 5.6 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 5.25 nF |
| Power Dissipation | 4.8 W |
| Number of Channels | 1 |
| Turn-On Delay Time | 16 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50 ns |
| Element Configuration | Single |
| Max Power Dissipation | 57 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -50 °C |
| Drain to Source Resistance | 4.6 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -23 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -30 V |
| Drain to Source Breakdown Voltage | -30 V |
